preliminary notice: this is not a final specification. some parametric limits are subject to change. a ug. 1999 5.0 0.4 1.27 1.8 max. 6.0 4.4 a ? ???? source gate drain a ? ? ? ? ?? ?? v v a a a a a w c c g FY4AEJ-03 n-ch 30 20 4 28 4 1.7 6.8 1.6 p-ch C30 20 C4 C28 C4 C1.7 C6.8 1.6 C55~+150 C55~+150 0.07 4v drive v dss ............................................................ ................... 30v r ds (on) (max) ........................................................ 30/80m w i d ............................................................ ............................. 4a mitsubishi po wer mosfet FY4AEJ-03 high-speed switching use nch/pc h po wer mosfet applica tion motor control, lamp control, solenoid control, dc-dc con v er ter , li-ionbatter y , notebook p/c, etc sop-8 outline drawing dimensions in mm v gs = 0v v ds = 0v l = 10 m h t ypical v alue parameter conditions symbol ratings unit v dss v gss i d i dm i da i s i sm p d t ch t stg drain-source voltage gate-source voltage drain current drain current (pulsed) av alanche current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature w eight maximum ra tings (tc = 25 c) l l l l
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 30 1.0 v m a ma v m w m w s pf pf pf ns ns ns ns v c/w ns mitsubishi power mosfet FY4AEJ-03 high-speed switching use nch/pch power mosfet i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 30v, v gs = 0v i d = 1ma, v ds = 10v i d = 4a, v gs = 10v i d = 2a, v gs = 4v i d = 4a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 15v, i d = 2a, v gs = 10v, r gen = r gs = 50 w i s = 1.7a, v gs = 0v channel to ambiet i s = 1.7a, d is /d t = C50a/ m s 1.5 23 40 8 550 220 115 12 20 40 40 0.75 100 0.1 0.1 2.0 30 55 1.10 78.1 C30 C1.5 v m a ma v m w m w s pf pf pf ns ns ns ns v c/w ns i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = C30v, v gs = 0v i d = C1ma, v ds = C10v i d = C4a, v gs = C10v i d = C2a, v gs = C4v i d = C4a, v ds = C10v v ds = C10v, v gs = 0v, f = 1mhz v dd = C15v, i d = C2a, v gs = C10v, r gen = r gs = 50 w i s = C1.7a, v gs = 0v channel to ambiet i s = C1.7a, d is /d t = 50a/ m s C2.0 60 115 6 680 180 90 10 15 50 30 C0.88 70 0.1 C0.1 C2.5 80 180 C1.20 78.1 drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol parameter test conditions v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) y fs c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) t rr drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol parameter test conditions v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) y fs c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) t rr limits min. typ. max. unit limits min. typ. max. unit electrical characteristics (tch = 25 c) n-ch p-ch
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FY4AEJ-03 high-speed switching use nch/pch power mosfet 0 20 40 60 80 100 10 ? 10 1 2 10 0 357 2 10 2 357 23 57 v gs = 4v tc = 25 c pulse test 10v 0 0.2 0.4 0.6 0.8 1.0 0246810 tc = 25 c pulse test i d = 8a 4a 2a 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 4v 3v v gs =10v,8v,6v,5v p d = 1.6w tc = 25 c pulse test 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 v gs = 10v,8v,6v,5v 4v p d = 1.6w 3v 3 2 3 5 5 7 7 2 10 0 357 2 10 1 357 235 10 0 2 3 5 7 10 1 2 3 5 10 ? tw = 10 m s t c = 25 c single pulse 100 m s 100ms 10ms 1ms dc 0 0.4 0.8 1.2 1.6 2.0 0 200 50 100 150 drain current i d (a) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain-source voltage v ds (v) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) power dissipation derating curve case temperature t c ( c) power dissipation p d (w) performance curves (n-ch)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 10 0 10 1 23 57 10 2 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 t c = 25 c, 75 c, 125 c v ds =10v pulse test 0 4 8 12 16 20 0246810 tc = 25 c v ds = 10v pulse test 10 ? 2 10 0 357 2 10 1 357 2 2 3 3 5 5 7 7 10 2 10 3 2 2 ciss coss crss tch = 25 c v gs = 0v f = 1mh z 10 ? 10 0 23 57 10 1 23 57 10 1 10 0 2 3 7 5 2 10 2 7 2 3 5 t d(off) t d(on) t r tch = 25 c v gs = 10v v dd = 15v r gen = r gs = 50 w t f 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 125 c t c = 75 c 25 c v gs = 0v pulse test 0 2 4 6 8 10 0 4 8 12 16 20 15v v ds = 20v 25v tch = 25 c i d =4a capacitance vs. drain-source voltage (typical) source-drain diode forward characteristics (typical) gate-source voltage vs.gate charge (typical) forward transfer admittance y fs (s) forward transfer admittance vs.drain current (typical) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) transfer characteristics (typical) drain-source voltage v ds (v) capacitance ciss, coss, crss (pf) switching characteristics (typical) drain current i d (a) switching time (ns) source-drain voltage v sd (v) source current i s (a) gate charge q g (nc) gate-source voltage v gs (v) mitsubishi power mosfet FY4AEJ-03 high-speed switching use nch/pch power mosfet
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 23 57 10 3 10 ? 10 ? 10 ? d = 1.0 0.5 0.2 0.1 0.05 0.01 transient thermal impedance characteristics pulse width tw (s) transient thermal impedance z th (ch-a) ( c/w) 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma pulse test single pulse channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) 0 0.8 1.6 2.4 3.2 4.0 ?0 0 50 100 150 v ds = 10v i d = 1ma pulse test threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) channel temperature tch ( c) 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 50 100 150 v gs = 10v i d = 4a pulse test channel temperature tch ( c) on-state resistance vs. channel temperature (typical) p dm tw d = t tw t 0.02 drain-source on-state resistance r ds (on) (t c) drain-source on-state resistance r ds (on) (25 c) drain-source breakdown voltage v ( br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) mitsubishi power mosfet FY4AEJ-03 high-speed switching use nch/pch power mosfet
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 0 40 80 120 160 200 ?0 1 10 1 ? ?0 0 ? ? ? ? 10 2 ? ? ? ? ? ? ? v gs =?v tc = 25 c pulse test ?0v 0 ?.4 ?.8 ?.2 ?.6 ?.0 0 2 4 6 8 10 tc = 25 c pulse test ?a ?a 0 ? ? ?2 ?6 ?0 0 ?.4 ?.8 ?.2 ?.6 ?.0 ?v ?v v gs =?0v ?v ?v p d = 1.6w tc = 25 c pulse test ? ? ? ? ? ? ? 2 ?0 0 3 5 7 2 ?0 1 ? ? ? ? ? ? 10 0 ? ? ? ? 10 1 ? ? ? 10 ? tw = t c = 25 c single pulse 100 m s 100ms 10ms 10 m s 1ms dc 0 0.4 0.8 1.2 1.6 2.0 0 200 50 100 150 ?v i d =?a 0 2 4 6 8 10 0 ?.2 ?.4 ?.6 ?.8 ?.0 v gs = ?0v,?v,?v,?v ?v p d = 1.6w ?v tc = 25 c pulse test drain current i d (a) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain-source voltage v ds (v) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) power dissipation derating curve case temperature t c ( c) power dissipation p d (w) mitsubishi power mosfet FY4AEJ-03 high-speed switching use nch/pch power mosfet performance curves (p-ch)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 ?0 0 ?0 1 ? ? ? ? ?0 2 ? ? ? ? 10 0 10 1 2 3 5 7 10 2 2 3 5 7 t c = 25 c 75 c 125 c v ds = ?0v pulse test 0 ? ? ?2 ?6 ?0 0 2 4 6 8 10 tc = 25 c v ds = ?0v pulse test ?0 ? ? ?0 0 ? ? ? ? ?0 1 ? ? ? ? 2 3 3 5 5 7 7 10 2 10 3 2 2 ciss coss crss tch = 25 c v gs = 0v f = 1mh z ?0 ? ?0 0 ? ? ? ? ?0 1 ? ? ? ? 10 1 10 0 2 3 7 5 2 10 2 2 3 7 5 t d(off) t d(on) t r tch = 25 c v gs = ?0v v dd = ?5v r gen = r gs = 50 w t f 0 ? ? ?2 ?6 ?0 0 ?.4 ?.8 ?.2 ?.6 ?.0 125 c t c = 75 c 25 c v gs = 0v pulse test 0 ? ? ? ? ?0 048121620 24 ?0v v ds = ?0v ?5v tch = 25 c i d = ?a capacitance vs. drain-source voltage (typical) source-drain diode forward characteristics (typical) gate-source voltage vs.gate charge (typical) forward transfer admittance y fs (s) forward transfer admittance vs.drain current (typical) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) transfer characteristics (typical) drain-source voltage v ds (v) capacitance ciss, coss, crss (pf) switching characteristics (typical) drain current i d (a) switching time (ns) source-drain voltage v sd (v) source current i s (a) gate charge q g (nc) gate-source voltage v gs (v) mitsubishi power mosfet FY4AEJ-03 high-speed switching use nch/pch power mosfet
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 23 57 10 3 10 ? 10 ? 10 ? d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = ?ma single pulse 0 ?.8 ?.6 ?.4 ?.2 ?.0 ?0 0 50 100 150 v ds = ?0v i d = ?ma 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 50 100 150 v gs = ?0v i d = ?a pulse test p dm tw d = t tw t transient thermal impedance characteristics pulse width tw (s) transient thermal impedance z th (ch-a) ( c/w) channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) channel temperature tch ( c) channel temperature tch ( c) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (t c) drain-source on-state resistance r ds (on) (25 c) drain-source breakdown voltage v ( br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) mitsubishi power mosfet FY4AEJ-03 high-speed switching use nch/pch power mosfet
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